RFD16N06LESM

RFD16N06LE, RFD16N06LESM Data Sheet October 1999 File Number 3628.3 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49027. Features 16A, 60V rDS(ON) = 0.047Ω Temperature Compensating PSPICE® Model Can be Driven Directly from CMOS, NMOS, TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD16N06LE RFD16N06LESM PACKAGE TO-251AA TO-252AA BRAND 16N06L 16N06LE G NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N06LESM9A. S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to el...