RFD16N06LESM

RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49027. Features 16A, 60V rDS(ON) = 0.047Ω Temperature Compensating PSPICE® Model Can be Driven Directly from CMOS, NMOS, TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD16N06LESM* PACKAGE TO-252AA BRAND 16N06LE G NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N06LESM9A. *RFD16N06LESM is only availabe in tape and reel. S Packaging JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2002 Fairchild Semiconductor Corporation RFD16N06LESM Rev. B1 RFD16N06LESM Absolute Maximum Ratin...