RFD16N06

Semiconductor RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. September 1998 Features 16A, 60V rDS(ON) = 0.047Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFD16 N06, RFD16 N06SM) /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- Symbol Ordering Information PART NUMBER RFD16N06 RFD16N06SM PACKAGE TO-251AA TO-252AA BRAND F16N06 F16N06 SOURCE GATE DRAIN NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A. Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyr...