Document
Data Sheet
RFD16N05SM
September 2013
N-Channel Power MOSFET 50V, 16A, 47 mΩ
The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
RFD16N05SM9A TO-252AA
BRAND D16N05
Features
• 16A, 50V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-252AA DRAIN (FLANGE)
GATE SOURCE
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD16N05SM9A
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
50
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
16
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Refer to Peak Current Curve
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Refer to Figure 5
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
72 0.48 -55 to 175
W W/oC
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V (Figure 11)
VGS(TH) VGS = VDS, ID = 250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
IGSS VGS = ±20V
rDS(ON) ID = 16A, VGS = 10V (Figure 9)
t(ON) td(ON)
tr
VDD = 25V, ID = 8A, RL = 3.125Ω, VGS = 10V, RGS = 25Ω (Figure 13)
td(OFF)
tf
t(OFF)
Qg(TOT) Qg(10) Q(TH)
VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V
VDD = 40V, ID ≈ 16A,
RL = 2.5Ω Ig(REF) = 0.8mA (Figure 13)
CISS COSS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)
CRSS
RθJC
RθJA TO-251 and TO-252
MIN TYP MAX UNITS
50
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
0.047
Ω
-
-
65
ns
-
14
-
ns
-
30
-
ns
-
55
-
ns
-
30
-
ns
-
-
125
ns
-
-
80
nC
-
-
45
nC
-
-
2.2
nC
-
900
-
pF
-
325
-
pF
-
100
-
pF
-
-
2.083 oC/W
-
-
100 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage
VSD ISD = 16A
-
-
1.5
V
Diode Reverse Recovery Time
trr
ISD = 16A, dISD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤250µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5).
©2003 Fairchild Semiconductor Corporation
RFD16N05SM Rev. C0
RFD16N05SM Typical Performance Curves Unless Otherwise Specified
POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
.