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RFD16N05SM Dataheets PDF



Part Number RFD16N05SM
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet RFD16N05SM DatasheetRFD16N05SM Datasheet (PDF)

Data Sheet RFD16N05SM September 2013 N-Channel Power MOSFET 50V, 16A, 47 mΩ The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated di.

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Data Sheet RFD16N05SM September 2013 N-Channel Power MOSFET 50V, 16A, 47 mΩ The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Ordering Information PART NUMBER PACKAGE RFD16N05SM9A TO-252AA BRAND D16N05 Features • 16A, 50V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2003 Fairchild Semiconductor Corporation RFD16N05SM Rev. C0 RFD16N05SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD16N05SM9A UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 16 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to Figure 5 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG 72 0.48 -55 to 175 W W/oC oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient BVDSS ID = 250µA, VGS = 0V (Figure 11) VGS(TH) VGS = VDS, ID = 250µA IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC IGSS VGS = ±20V rDS(ON) ID = 16A, VGS = 10V (Figure 9) t(ON) td(ON) tr VDD = 25V, ID = 8A, RL = 3.125Ω, VGS = 10V, RGS = 25Ω (Figure 13) td(OFF) tf t(OFF) Qg(TOT) Qg(10) Q(TH) VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 40V, ID ≈ 16A, RL = 2.5Ω Ig(REF) = 0.8mA (Figure 13) CISS COSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) CRSS RθJC RθJA TO-251 and TO-252 MIN TYP MAX UNITS 50 - - V 2 - 4 V - - 1 µA - - 25 µA - - ±100 nA - - 0.047 Ω - - 65 ns - 14 - ns - 30 - ns - 55 - ns - 30 - ns - - 125 ns - - 80 nC - - 45 nC - - 2.2 nC - 900 - pF - 325 - pF - 100 - pF - - 2.083 oC/W - - 100 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 16A - - 1.5 V Diode Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse test: pulse width ≤250µs, duty cycle ≤2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). ©2003 Fairchild Semiconductor Corporation RFD16N05SM Rev. C0 RFD16N05SM Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 1.0 0.8 0.6 .


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