RFD16N05LSM

RFD16N05L, RFD16N05LSM Data Sheet April 1999 File Number 2269.2 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871. Features 16A, 50V rDS(ON) = 0.047Ω UIS SOA Rating Curve (Single Pulse) Design Optimized for 5V Gate Drives Can be Driven Directly from CMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD16N05L RFD16N05LSM PACKAGE TO-251AA TO-252AA BRAND RFD16N05L RFD16N05LSM Symbol D NOTE: When ordering, include...