RF3100-3

RF3100-3 2 Typical Applications 3V CDMA US-PCS Handsets 3V CDMA2000/1X PCS Handsets Spread-Spectrum Systems Designed for Compatibility with Qualcomm Chipsets 3V 1900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-3 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3100-3 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 ü Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features Input/Output Internally Matched@50 Ω Single 3V Supply 28dBm Linear Output Power -141dBm/Hz Noise Power VCC1 1 7 GND RF IN 2 6 RF OUT 35% Linear Efficiency 45mA Idle Current (Low Power Mode) VREG 3 4 VMODE 5 VCC2 Ordering Information RF3100-3 3V 1900MHz Linear Ampli...