DatasheetsPDF.com

RF2325 Dataheets PDF



Part Number RF2325
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description 3V GENERAL PURPOSE AMPLIFIER
Datasheet RF2325 DatasheetRF2325 Datasheet (PDF)

Preliminary RF2325 3V GENERAL PURPOSE AMPLIFIER 4 Typical Applications • Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers Product Description The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and.

  RF2325   RF2325


Document
Preliminary RF2325 3V GENERAL PURPOSE AMPLIFIER 4 Typical Applications • Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers Product Description The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50 Ω. The only external components required for specified performance are bypass and DC blocking capacitors and two bias elements (as shown in application schematic). The RF2325 is available in a very small industry-standard SOT-23 5-lead surface mount package, enabling compact designs which conserve board space. 1.60 + 0.01 0.400 1 4 GENERAL PURPOSE AMPLIFIERS 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching® Applied ü Package Style: SOT 5-Lead Si BJT Si Bi-CMOS GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • DC to >2000MHz Operation • 2.7V to 3.3V Single Supply • +17dBm Output IP3 • 16dB Gain at 900MHz GND 1 GND 2 RF IN 3 5 RF OUT • 12dB Gain at 1900MHz • Internally 50 Ω Matched Input and Output 4 GND Ordering Information RF2325 RF2325 PCBA 3V General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010720 4-121 RF2325 Absolute Maximum Ratings Parameter Supply Voltage Operating Ambient Temperature Storage Temperature Preliminary Rating 4.0 -40 to +85 -55 to +150 Unit V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Min. Specification Typ. Max. DC to >2000 20 5.0 18 8 15 18 23 19 5.0 18 7 12 23 22 Unit MHz Condition T=27 °C, VCC =3.0V T=27 °C, VCC =3.0V 4 GENERAL PURPOSE AMPLIFIERS Overall Frequency Range 100MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB 500MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 900MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation 15.3 16 5.0 17 7 10 20 22 16 5.0 17 7 10 19 22 12 5.4 16 6 10 17 19 3.0±10% 27 17.3 dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 1000MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 2000MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB V mA T=27 °C, VCC =3.0V Power Supply Operating Voltage Operating Current 23.5 29.5 VCC =3.0V 4-122 Rev A4 010720 Preliminary Pin 1 2 3 Function GND GND RF IN Description Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is not externally DC blocked and thus requires an external blocking capacitor suitable for the frequency of operation. The input impedance of this pin is internally matched to 50 Ω using resistive feedback. RF IN RF2325 Interface Schematic RF OUT 4 4 5 GND RF OUT Same as pin 1. RF output and bias pin. The input impedance of this pin is internally matched to 50 Ω using resistive feedback. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well-bypassed. See pin 3 schematic. GENERAL PURPOSE AMPLIFIERS Application Schematic VCC 39 Ω 1 nF 220 nH 1 2 100 pF RF IN 3 4 5 100 pF RF OUT Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 NC 3 1 C1 100 pF 2 3 4 5 C2 100 pF VCC GND L2 220 nH 50 Ω µ strip R1 39 Ω C5 1 nF P1-1 RF OUT J2 RF IN J1 50 Ω µ strip Rev A4 010720 4-123 RF2325 Evaluation Board Layout 1” x 1” Preliminary 4 GENERAL PURPOSE AMPLIFIERS 4-124 Rev A4 010720 Preliminary RF2325 S21, Vcc=2.7 V 22 20 18 16 14 22 20 18 16 14 RF2325 RF2325 S21, Vcc=2.7 V Gain (dB) 12 10 8 6 4 2 0 0.1 1.1 2.1 3.1 Temp = 25°C Temp = 80°C Temp = -40°C Gain (dB) 12 10 8 6 4 2 0 0.1 1.1 2.1 3.1 Temp = 25°C Temp = 80°C Temp = -40°C Frequency (GHz) Frequency (GHz) 4 GENERAL PURPOSE AMPLIFIERS RF2325 Input VSWR, Vcc = 2.7 V 3 Temp = 25°C Temp = 80°C RF2325 Output VSWR, Vcc = 2.7 V 4 .


RF2324 RF2325 RF2326


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)