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RN4987FE

Toshiba Semiconductor

Silicon PNP/NPN Transistor

RN4987FE Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4987FE 1....


Toshiba Semiconductor

RN4987FE

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RN4987FE Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4987FE 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. 3. Equivalent Circuit 4. Packaging and Pin Assignment ES6 ©2021 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production 2000-05 2021-08-18 Rev.1.0 5. Orderable part number RN4987FE Orderable part number AEC-Q101 Note RN4987FE,LF � General Use RN4987FE,LXGF YES (Note 1) Unintended Use RN4987FE,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) 6. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit 50 V 50 6 100 mA 7. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit -50 V -50 -6 -100 mA 8. Q1, Q2 Comm...




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