RN4602
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4602
Swit...
RN4602
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process) Silicon
NPN Epitaxial Type (PCT Process)
RN4602
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Includeing two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm
Equivalent Circuit and Bias Resister Values
R1: 10kΩ R2: 10kΩ (Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
JEDEC
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Unit V V V mA
― ― 2-3N1A
EIAJ TOSHIBA Weight: 0.015g
Q2 Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA
1
2001-06-05
RN4602
Q1, Q2 Common Maximum Ratings (Ta = 25°C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC * Tj Tstg Rating 300 150 −55~150 Unit mW °C °C
* Total rating
Marking
Equivalent Circuit (Top View)
2
2001-06-05
RN4602
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Co...