RN2908FE

RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · Complementary to RN1907FE~RN1909FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No. RN2907FE RN2908FE R2 RN2909FE E R1 (kW) 10 22 47 R2 (kW) 47 47 22 B R1 JEDEC JEITA TOSHIBA Weight: g (typ.) ― ― ― Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Characteristics Collector-base voltage Collector-emitter voltage RN2907FE~ RN2909FE RN2907FE Emitter-base voltage RN2908FE RN2909FE Collector current Collector power dissipation RN2907FE~ RN2909FE Junction temperature Storage temperature range IC PC (Note) Tj Tstg VEBO Symbol VCBO VCEO Rating -50 -50 -6 -7 -15 -100 100 150 -55~150 mA mW °C °C 1 2 3 V Q1 Unit V V Q2 (top view) 6 5 4 Note: Total rating 1 2003-01-10 RN2907FE~RN2909FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current RN2907FE~2909FE RN2907FE Emitter cut-off current RN2908FE RN2909FE RN2907FE DC current gain RN2908FE RN2909FE Collector-emitter saturation voltage RN2907FE~2909FE RN2907FE Input voltage (ON) RN2908FE RN2909FE...