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RN2705

Toshiba Semiconductor

Silicon PNP Transistor

RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Swi...


Toshiba Semiconductor

RN2705

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Description
RN2701~RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2701,RN2702,RN2703,RN2704,RN2705,RN2706 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in USV (ultra super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1701~1706 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2701 RN2702 RN2703 RN2704 RN2705 RN2706 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 6.2mg ― ― 2-2L1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN2701~2706 RN2701~2704 RN2705, 2706 Collector current Collector power dissipation Junction temperature Storage temperature range IC PC * Tj Tstg Symbol VCBO VCEO Rating −50 −50 −10 −5 −100 200 150 −55~150 mA mW °C °C Unit V V * : Total rating 1 2001-06-07 RN2701~RN2706 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2701~2706 RN2701 RN2702 Emitter cut-off current RN2703 RN2704 RN2705 RN2706 RN2701 RN2702 DC current gain RN2703 RN2704 RN2705 RN2706 Collector-emitter saturation voltage RN2701~2706 RN2701 RN2702 Input voltage (ON) RN2703 RN2704 RN2705 RN2706 Input voltage (OFF) Translation frequency Collector output capacitance RN2701~2704 RN2705, 2706 RN2701~2706 RN2701~2706 RN2701 RN...




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