RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2...
RN2421~RN2427
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424 RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l l l l l l High current type (IC(MAX) = −800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Low VCE (sat) Complementary to RN1421~RN1427 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No. RN2421 RN2422 RN2423 RN2424 RN2425 RN2426 RN2427 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10
JEDEC JEITA TOSHIBA
― SC-59 2-3F1A
Weight: 0.012 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Base voltage Collector-Emitter voltage RN2421~2427 RN2421~2424 Emitter-Base voltage RN2425, 2426 RN2427 Collector current Collector power dissipation Junction temperature Storage temperature range RN2421~2427 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −10 −5 −6 −800 200 150 −55~150 mA mW °C °C V Unit V V
1
2001-11-29
RN2421~RN2427
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current RN2421~2427 RN2421 RN2422 RN2423 Emitter cut-off current RN2424 RN2425 RN2426 RN2427 RN2421 RN2422 RN2423 DC current gain RN2424 RN2425 RN2426 RN2427 Collector-Emitter saturation voltage RN2421 RN2422~2427 RN2421 RN2422 RN2423 Input voltage (ON) RN2424 RN2425 RN2426 RN2427 RN2421~2424 Input voltage (OFF) Transition frequency Collector output capacitance RN2425, 2426 RN2427 RN2421...