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RN2221

Toshiba Semiconductor

Silicon PNP Transistor

RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2...



RN2221

Toshiba Semiconductor


Octopart Stock #: O-345329

Findchips Stock #: 345329-F

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Description
RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN1221~RN1227 Unit: mm Equivalent Circuit Bias Resistor Values Type No. RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10 JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2221~2227 RN2221~2224 Emitter-base voltage RN2225, 2226 RN2227 Collector current Collector power dissipation Junction temperature Storage temperature range RN2221~2227 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −10 −5 −6 −800 300 150 −55~150 mA mW °C °C V Unit V V 1 2001-06-07 RN2221~RN2227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2221~2227 RN2221 RN2222 RN2223 Emitter cut-off current RN2224 RN2225 RN2226 RN2227 RN2221 RN2222 RN2223 DC current gain RN2224 RN2225 RN2226 RN2227 Collector-emitter saturation voltage RN2221 RN2222~2227 RN2221 RN2222 RN2223 Input voltage (ON) RN2224 RN2225 RN2226 RN2227 RN2221~2224 Input voltage (OFF) Translation frequency Collector output capacitance RN2225, 2226 RN2227 RN2221~2227 RN2221~2227 R...




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