RN1707JE~RN1709JE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN170...
RN1707JE~RN1709JE
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process) (Bias Resistor built-in
Transistor)
RN1707JE,RN1708JE,RN1709JE
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
· · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a
transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · · Wide range of resistor values are available to use in various circuit designs. Complementary to RN2707JE~2709JE Unit: mm
Equivalent Circuit and Bias Resistor Values
C R1 (kW) 10 22 47 R2 (kW) 47 47 22
Type No. RN1707JE RN1708JE
B
R1 R2
JEDEC JEITA TOSHIBA Weight: g (typ.)
― ― ―
RN1709JE E
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage RN1707JE~ 1709JE RN1707JE Emitter-base voltage RN1708JE RN1709JE Collector current Collector power dissipation RN1707JE~ 1709JE Junction temperature Storage temperature range IC PC (Note) Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 100 150 -55~150 mA mW °C °C V Unit V V
Equivalent Circuit
(top view)
5 Q1 4 Q2
1
2
3
Note: Total rating
1
2002-01-29
RN1707JE~RN1709JE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector cut-off current RN1707JE~1709JE RN1707JE Emitter cut-off current RN1708JE RN1709JE RN1707JE DC current gain RN1708JE RN1709JE Collector-emitter saturati...