RN1510

RN1510,RN1511 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1510,RN1511 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV l (super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2510~RN2511 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC * Tj Tstg Rating 50 50 5 100 300 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.014g ― ― 2-3L1A Equivalent Circuit (Top View) *: Total rating Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN1510 RN1511 Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz Min ― ― 120 ― ― ― 3.29 7 Typ. ― ― ― 0.1 250 3 4.7 10 Max 100 100 700 0.3 ― 6 6.11 13 V MHz pF kW Unit nA nA 1 2001-06-13 RN1510,RN1511 (Q1, Q2 Common) 2 2001-06-13 RN1510,RN1511 (Q1, Q2 Common) 3 2001-06-13 RN...