RN1116

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2114~2118 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN1114 RN1115 RN1116 RN1117 RN1118 R1 (kΩ) 1 2.2 4.7 10 47 R2 (kΩ) 10 10 10 4.7 10 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1114~1118 RN1114 RN1115 Emitter-base voltage RN1116 RN1117 RN1118 Collector current Collector power dissipation Junction temperature Storage temperature range RN1114~1118 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 5 6 7 15 25 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 2.4mg Unit V V ― ― 2-2H1A V mA mW °C °C 1 2001-06-07 RN1114~RN1118 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1114~1118 RN1114~1118 RN1114 RN1115 Emitter cut-off current RN1116 RN1117 RN1118 DC current gain Collector-emitter saturation voltage RN1114~16, 18 RN1117 RN1114~1118 RN1114 RN1115 Input voltage (ON) RN1116 RN1117 RN1118 RN1114 RN1115 Input voltage (OFF) RN1116 RN1117 RN1118 Translation Frequency Collector output capacitance RN1114~1118 RN1114~1118 RN1114 RN1115 Input Resistor RN1116 RN1117 RN1118 RN1114 RN1115 Resistor Ratio RN1116 RN1117 RN1118 R1/R2 R1 fT Cob VI (OFF) VI (ON) hFE VCE...