2.4-2.5 GHz GaAs MMIC Power Amplifier
RMPA2450
May 2004
RMPA2450
2.4–2.5 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild RMPA2450 is a fully...
Description
RMPA2450
May 2004
RMPA2450
2.4–2.5 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. On-chip matching components allow operation in a 50Ω system with no external matching components. The MMIC chip design utilizes our 0.25µm power PHEMT process.
Features
35% Power Added Efficiency 31dBm Output Power (P1dB) at Vd = +7V 28dBm Output Power (P1dB) at Vd = +5V No external RF matching components Small Package Outline: 0.28" x 0.28" x 0.07" Thermal Resistance (Channel to Case): 33°C/W
Device
Absolute Ratings
Symbol Vd1, Vd2 Vg1, Vg2 Vd–Vg PIN Ids Ig Tch TCASE TSTG Parameter Positive Drain DC Voltage Negative Gate DC Voltage Simultaneous Drain to Gate Voltage RF Input Power (from 50Ω source) Drain to Source Current Gate Current Channel Temperature Operating Case Temperature Storage Temperature Range Rating +8 -5 +10 +10 575 5 150 -40 to 100 -40 to 125 Units V V V dBm mA mA °C °C °C
©2004 Fairchild Semiconductor Corporation
RMPA2450 Rev. C
RMPA2450
Electrical Characteristics (Note 4, At 25°C, ZO = 50Ω, Unless Otherwise Noted)
Parameter Frequency Range Gain1, 2, 4 Output Power, P1dB1,4 Assoc. Power Added Efficiency Output Power, P1dB3 Assoc. Power Added Efficiency Drain Current (Idd1 + Idd2) Gate Current (Igg1 + Igg2...
Similar Datasheet