RMPA2265

RMPA2265 December 2004 RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Features Single positive-supply operation and low power and shutdown modes 42% WCDMA efficiency at +28 dBm average output power 1920–1980 MHz 39% WCDMA efficiency at 27.5 dBm average output power 1850–1910 MHz Meets UMTS/WCDMA performance requirements in both UMTS bands Compact, low-profile package–(3.0 x 3.0 x 1.0 mm nominal) Internally matched to 50Ω and DC blocked RF input/ output Device (3 x 3 x 1mm) PY 226 WW5 Functional Block Diagram (Top View) PA MODULE MMIC Vcc1 1 Input Match 8 Output Match Vcc2 RF IN 2 7 RF OUT Vmode 3 DC Bias Control 6 GND Vref 4 5 GND (paddle ground on package bottom) ©2004 Fairchild Semiconductor Corporation RMPA2265 Rev. E RMPA2265 Absolute Ratings 1 Symbol VCC1, VCC2 VREF VMODE PIN TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Ratings 5.0 2.6 to 3.5 3.5 +10 -55 to +150...