RMPA0965

RMPA0965 September 2004 RMPA0965 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module General Description The RMPA0965 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Features Single positive-supply operation with low power and shutdown modes 40% CDMA efficiency at +28 dBm average output power 52% AMPS mode efficiency at +31 dBm output power Compact LCC package ( 3.0 x 3.0 x 1.0 mm) Internally matched to 50Ω and DC blocked RF input/ output Meets CDMA2000-1XRTT performance requirements Device Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Value 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 Vmode 3 DC BIAS CONTROL Vref 4 INPUT MATCH OUTPUT MATCH 8 Vcc2 7 RF OUT 6 GND 5 GND (paddle ground on package bottom) ©2004 Fairchild Semiconductor Corporation RMPA0965 Rev. C RMPA0965 Electrical Characteristics1 ...