RMM2080

RMM2080 May 2004 RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125µm & 4x250µm). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500µm). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques. Features 2–18GHz Bandwidth 24dB Typical Gain ±2dB Gain Flatness 20dBm Output Power Typical Three Stages of Distributed Amplification Gain Control of up to 70dB range Dual-Gate Ion-Implanted 0.5µm FETs Chip Size: 4.14mm x 3.22mm x 0.1mm Device Absolute Ratings Symbol Vd Vg Vgd Id PIN(CW) TCASE TSTORAGE RJC Parameter Positive Drain DC Voltage (+7V Typ) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +8 -2 10 400 +8 -30 to +85 -55 to +125 22 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMM2080 Rev. C RMM2080 Electrical Characteristics ...