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RM2B Dataheets PDF



Part Number RM2B
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON RECTIFIER DIODES
Datasheet RM2B DatasheetRM2B Datasheet (PDF)

RM2 - RM2Z PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting pos.

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RM2 - RM2Z PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM2Z 200 140 200 RM2 400 280 400 RM2A 600 420 600 1.2 RM2B 800 560 800 RM2C 1000 700 1000 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ R θJA TJ TSTG 100 0.91 10 50 30 50 - 65 to + 175 - 65 to + 175 Amps. Volts µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : MAY 27, 1998 RATING AND CHARACTERISTIC CURVES ( RM2 - RM2Z ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.5 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8.3 ms SINGLE HALF SINE WAVE 80 1.2 0.9 60 0.6 40 0.3 60 Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175 20 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz REVERSE CURRENT, MICROAMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 100 °C 100 FORWARD CURRENT, AMPERES 10 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 1.0 Pulse Width = 300 µ s 2% Duty Cycle 0.1 TJ = 25 °C PERCENT OF RATED REVERSE VOLTAGE, (%) 1.3 1.4 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE, VOLTS .


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