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RM250UZ-2H Dataheets PDF



Part Number RM250UZ-2H
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Diode-Module
Datasheet RM250UZ-2H DatasheetRM250UZ-2H Datasheet (PDF)

MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H • IF(AV) • VRRM Average forward current 250A Repetitive peak reverse voltage .... 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipme.

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MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H • IF(AV) • VRRM Average forward current .......... 250A Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3–φ6.5 4–M8 A1 6 20 (DZ) K1 K2 A2 40 A1 SR1 (CZ) K1 K2 SR2 A2 18 30 68.5 16 32 18 30 68.5 150 16 A1 SR1 (UZ) A1 SR1 23 A2 K1 K2 SR2 2 A2 K1 K2 SR2 LABEL 7 32 39 (DZ Type) (Bold line is connective bar.) Feb.1999 MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class M 400 480 320 H 800 960 640 24 1200 1350 960 2H 1600 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=89°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 390 250 5000 1.0 × 105 1000 –40~+150 –40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=750A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 30 1.3 0.2 0.1 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24.-2H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVE MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.5 0.7 0.9 1.1 1.3 1.5 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 5000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) 4000 FORWARD CURRENT (A) 3000 2000 1000 0 1 2 3 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 400 350 POWER DISSIPATION (W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.25 TRANSIENT THERMAL IMPEDANCE (°C/W) RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE OPERATION THREE-PHASE OPERATION DC OPERATION 0.20 300 250 200 150 100 50 0.15 0.10 0.05 0 10.


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