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RM200DA-24F Dataheets PDF



Part Number RM200DA-24F
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH SPEED SWITCHING USE INSULATED TYPE
Datasheet RM200DA-24F DatasheetRM200DA-24F Datasheet (PDF)

MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F DC current .. 200A Repetitive peak reverse voltage ... 1000/1200V • trr Reverse recovery time ... 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 • IDC • VRRM APPLICATION Free wheel use, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (93) 25 25 21.5 4–φ6.5 K2A1 A2 K1 K1A2 SR2 A1 SR1 K.

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MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM200DA-20F,-24F DC current ................................ 200A Repetitive peak reverse voltage ........ 1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 • IDC • VRRM APPLICATION Free wheel use, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (93) 25 25 21.5 4–φ6.5 K2A1 A2 K1 K1A2 SR2 A1 SR1 K2 3–M6 3 17 8 17 8 17 3 30MAX. LABEL 23 37 62±0.5 (48) Feb.1999 MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VDRM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage (Tj=25°C) Voltage class 20 1000 1100 800 24 1200 1350 960 Unit V V V Symbol IDC IFSM I2t Tj Tstg Viso DC current Parameter Resistive load, TC=75°C Conditions Ratings 200 4000 1.65 × 104 –40~+150 –40~+125 Unit A A A2s °C °C V N·m kg·cm N·m kg·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolation voltage One half cycle at 60Hz, peak value Value for one cycle surge current Charged part to case Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 460 — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Tj=150°C, VRRM applied Tj=25°C, IFM=200A, Instantaneous meas. IFM=200A, Tj=150°C, di/dt=–400A/µs, VR=600V Junction to case Case to fin, conductive grease applied Test conditions Min. — — — — — — Typ. — — — — — — Max. 40 1.5 0.8 130 0.25 0.4 Unit mA V µs µC °C/ W °C/ W Feb.1999 MITSUBISHI FAST RECOVERY DIODE MODULES RM200DA-20F,-24F HIGH SPEED SWITCHING USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 1.0 1.4 1.8 2.2 FORWARD VOLTAGE (V) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 4 57 10 1 0.32 0.28 0.24 Zth (j-c) (°C/W) 0.20 0.16 0.12 0.08 0.04 0 10 –3 2 3 5 7 10 –2 2 3 5 710 –1 2 3 5 7 10 0 TIME (s) Tj=25°C FORWARD CURRENT (A) RATED SURGE (NON-REPETITIVE) FORWARD CURRENT 4000 3600 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) 3200 Irr (A), Qrr (µC) 2800 2400 2000 1600 1200 800 400 0 1 2 3 4 5 7 10 20 30 40 5070100 REVERSE RECOVERY CHARACTERISTICS VS. FORWARD CURRENT (TYPICAL) 10 3 7 VR=600V 5 di/dt=–400A/µs Tj=25°C 3 2 Tj=150°C 10 2 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 Irr Qrr 10 1 10 0 trr 7 7 5 5 3 3 2 2 10 –1 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) REVERSE RECOVERY CHARACTERISTICS VS. –di/dt (TYPICAL) 10 3 7 VR=600V 5 IF=200A Tj=25°C 3 Tj=150°C 2 Irr (A), Qrr (µC) 10 2 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 Irr Qrr 10 1 10 0 7 7 trr 5 5 3 3 2 2 10 –1 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 –di/dt (A/µs) trr (µs) Feb.1999 trr (µs) .


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