SILICON RECTIFIER DIODES
RM11A - RM11C
PRV : 600 - 1000 Volts Io : 1.2 Amperes
FEATURES :
* * * * * High current capability High surge current ca...
Description
RM11A - RM11C
PRV : 600 - 1000 Volts Io : 1.2 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES
D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : Ta = 25 °C Ta = 100 °C
SYMBOL
VRRM VRMS VDC IF
RM11A
600 420 600
RM11B
800 560 800 1.2
RM11C
1000 700 1000
UNITS
V V V A
IFSM VF IR IR(H) CJ RθJA TJ TSTG
100...
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