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RLD03N06CLE

Fairchild Semiconductor

N-Channel Power MOSFET

Data Sheet RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1999 File Number 3948.5 [ /Title (RLD0 3N06C LE, RLD03 N06CL...


Fairchild Semiconductor

RLD03N06CLE

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Data Sheet RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1999 File Number 3948.5 [ /Title (RLD0 3N06C LE, RLD03 N06CL ESM, RLP03 N06CL E) /Subject (0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamp ed, Logic Level N-Cha nnel Power MOSFETs) /Autho r () /Keywords (Intersil Corpo- 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. These devices incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49028. Ordering Information PART NUMBER RLD03N06CLE PACKAGE TO-251AA BRAND 03N06C RLD03N06CLESM TO-252AA 03N06C RLP03N06CLE TO-220AB 03N06CLE NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RLD03N06CLESM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE Features 0.30A, 60V rDS(ON) ...




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