RX1214B350Y

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design of circuits Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. handbook, 4 columns RX1214B350Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 130 µs; δ = 6% f (GHz) 1.2 to 1.4 VCC (V) 50 PL (W) 280 Gp (dB) ≥7 ηC (%) ≥40 PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product...