RX1214B300Y

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance Internal input and output matching networks for an easy circuit design. APPLICATIONS Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange. 3 2 Top view olumns RX1214B300Y PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 e MAM045 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a common base class-C wideband amplifier. MODE OF OPERATION Class-C tp = 150 µs; δ = 5 % f (GHz) 1.2 to 1.4 VCC (V) 50 PL (W) ≥250 GP (dB) ≥7 ηC (%) ≥35 Zi; ZL (Ω) see Fig 6 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who...