DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B170W Microwave power transistor
Product specification Supersedes data of Dece...
DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B170W Microwave power
transistor
Product specification Supersedes data of December 1994 1997 Feb 18
Philips Semiconductors
Product specification
Microwave power
transistor
FEATURES Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Intended for use in common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT439A metal ceramic flange package, with base connected to flange.
ok, 4 columns
RX1214B170W
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 500 µs; δ = 10% f (GHz) 1.2 to 1.4 VCC (V) 42 PL (W) ≥170 Gp (dB) ≥6.7 ηC (%) ≥40
PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b
3 2 Top view 3
e
MAM045
Fig.1 Simplified outline and symbol.
WARNING Product and environmental s...