DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B80W; RX1214B130Y NPN microwave power transistors
Product specification Supers...
DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B80W; RX1214B130Y
NPN microwave power
transistors
Product specification Supersedes data of November 1994 1997 Feb 14
Philips Semiconductors
Product specification
NPN microwave power
transistors
FEATURES Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT439A metal ceramic flange package, with base connected to flange.
RX1214B80W; RX1214B130Y
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C RX1214B80W CONDITIONS tp = 500 µs; δ = 10% f (GHz) 1.2 to 1.4 1.2 to 1.4 VCC (V) 40 50 PL (W) ≥80 ≥130 Gp (dB) ≥7 ≥7 ηC (%) ≥35 ≥35
Class C tp = 150 µs; RX1214B130Y δ = 5% PINNING - SOT439A PIN 1 2 3 collector emitter
DESCRIPTION
base connected to flange
handbook, 4 columns
1
c b
3 ...