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RURG5060 Dataheets PDF



Part Number RURG5060
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 50A/ 600V Ultrafast Diode
Datasheet RURG5060 DatasheetRURG5060 Datasheet (PDF)

RURG5060 Data Sheet January 2002 50A, 600V Ultrafast Diode The RURG5060 is an ultrafast diode with soft recovery characteristics (trr < 65ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic mini.

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RURG5060 Data Sheet January 2002 50A, 600V Ultrafast Diode The RURG5060 is an ultrafast diode with soft recovery characteristics (trr < 65ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA09909. Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <65ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Ordering Information PART NUMBER RURG5060 PACKAGE TO-247 BRAND RURG5060 Packaging JEDEC STYLE 2 LEAD TO-247 ANODE NOTE: When ordering, use the entire part number. Symbol K CATHODE (BOTTOM SIDE METAL) CATHODE A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURG5060 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 102oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 600 600 600 50 100 500 150 40 -65 to 175 ©2002 Fairchild Semiconductor Corporation RURG5060 Rev. B RURG5060 Electrical Specifications SYMBOL VF IF = 50A IF = 50A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/µs IF = 50A, dIF/dt = 100A/µs ta tb RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 6), summation of ta + tb . ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 50A, dIF/dt = 100A/µs IF = 50A, dIF/dt = 100A/µs TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 30 20 MAX 1.6 1.4 250 1.5 65 75 1 UNITS V V µA mA ns ns ns ns oC/W Typical Performance Curves 300 IR, REVERSE CURRENT (µA) 1000 175oC 100 IF , FORWARD CURRENT (A) 100 10 100oC 175oC 10 100oC 25oC 1.0 25oC 0.1 1 0 0.5 1.0 1.5 2.0 2.5 VF , FORWARD VOLTAGE (V) 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE ©2002 Fairchild Semiconductor Corporation RURG5060 Rev. B RURG5060 Typical Performance Curves 60 50 40 t, TIME (ns) 30 20 10 0 1 10 IF , FORWARD CURRENT (A) 60 ta tb trr (Continued) IF(AV), AVERAGE FORWARD CURRENT (A) 60 50 DC 40 SQ. WAVE 30 20 10 0 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (oC) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT I = 1.4A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD I V FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS ©2002 Fairchild Semiconductor Corporation RURG5060 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchil.


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