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RU3YX

EIC discrete Semiconductors

FAST RECOVERY RECTIFIER DIODES

ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND T...


EIC discrete Semiconductors

RU3YX

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ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RU3YX PRV : 100 Volts Io : 2.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sinewave, Single Shot ) Maximum Forward Voltage at IF = 2.0 Amps. Maximum Reverse Current at VR = VRM Maximum Reverse Current at VR = VRM Maximum Reverse Recovery Time ( Note 1) Junction Temperature Range Storage Temperature ...




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