RTQ030P02TR

RTQ030P02 Transistor DC-DC Converter (−20V, −3.0A) RTQ030P02 zFeatures 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TS zApplications DC-DC converter zStructure Silicon P-channel MOSFET zEquivalent circuit (6) (5) (4) zPackaging specifications Package Type Code Basic ordering unit (pieces) RTQ030P02 (1) (2) ∗2 Taping TR 3000 ∗1 (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN 0.85 (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 2.9 1/4 RTQ030P02 Transistor zAbsolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature <1% <10µs, Duty cycle = ∗1 Pw = ∗2 Mounted on a ceramic board Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg Limits −20 ±12 ±3 ±12 −1 −4 1.25 150 −55~+150 Unit V V A A A A °C °C ∗1 ∗1 W ∗2 zElectrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol IGSS Min. − −20 − −0.7 − Typ. − − − − 60 65 110 − 800 150 100 15 27 50 20 9.0 1.6 4.6 Max. ±10 − −1 −2.0 80 90 150 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC ID=−1.5A VDD −15V VGS=−4.5V RL=10Ω RGS=10Ω VDD −15V VGS=−4.5V ID=−3A Conditions VGS=±12V, VDS=0V ID=−1mA, , VGS=0V VDS=−20V, VGS=...