RTF015P02

RTF015P02 Transistors DC-DC Converter (−20V, −1.5A) RTF015P02 zFeatures 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) zExternal dimensions (Unit : mm) TUMT3 0.2 (3) 2.1±0.1 1.7±0.1 0 to 0.1 (1) (2) zApplications DC-DC converter 0.2 0.65 0.65 1.3±0.1 0.17±0.05 Each lead has same dimensions Abbreviated symbol : WV zStructure Silicon P-channel MOS FET zEquivalent circuit (3) zPackaging specifications Package Type RTF015P02 Code Basic ordering unit (pieces) Taping TL 3000 (1) ∗1 ∗2 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain 0.2MAX 0.1 0.3 + −0.05 2.0±0.1 0.85MAX 0.77±0.05 1/4 RTF015P02 Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg Limits −20 ±12 ±1.5 ±6 −0.6 −6 0.8 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − ∗ Static drain-source on-state − RDS (on) resistance − Yfs ∗ 1.5 Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − ...