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SM2GZ47A

Toshiba Semiconductor

BI-DIRECTIONAL TRIODE THYRISTOR

SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47, SM2GZ47A, SM2J...


Toshiba Semiconductor

SM2GZ47A

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Description
SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47, SM2GZ47A, SM2JZ47, SM2JZ47A AC POWER CONTROL APPLICATIONS Unit: mm z IT (RMS) = 1A (Ta = 65°C without radiator) z Gate Trigger Current: IGT = 5mA Max. (TYPE “A”) z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT (RMS) = 2A (Tc = 110°C) z Isolation Voltage: VISOL = 1500V (AC, t = 60s) ABSOLUTE MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SM2GZ47 SM2GZ47A SM2JZ47 SM2JZ47A R.M.S On−State Current (Full Sine Waveform) Tc = 110°C Ta = 65°C Peak One Cycle Surge On−State Current (Non−Repetitive) I2t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) VDRM IT (RMS) ITSM I2t PGM PG (AV) VFGM IGM Tj Tstg VISOL 400 ...




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