SM1J43

SM1G43,SM1J43 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM1G43,SM1J43 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l Higt Commutating (dv / dt) : IT (RMS) = 1A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM1G43 SM1J43 SYMBOL VDRM IT (RMS) ITSM I t PGM PG (AV) VGM IGM Tj Tstg 2 RATING 400 600 1.0 8 (50Hz) 8.8 (60Hz) 0.32 1 0.1 6 0.5 −40~125 −40~125 UNIT V A A A s W W V A °C °C 2 R.M.S On−State Current (Full Sine Waveform Tc = 74°C) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 0.2g TO−92 SC−43 13−5A1E 1 2001-07-10 SM1G43,SM1J43 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Thermal Resistance VTM VGD IH Rth (j−c) Rth (j−a) ITM = 1.5A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC Junction to Ambient, AC IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) MIN ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ―...