SM16GZ51

SM16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off−State Voltage l R.M.S On−State Current l High Commutating (dv / dt) l Isolation Voltage : VDRM = 400, 600 V : IT (RMS) = 16 A : (dv / dt) c = 10 V / µs : VISOL = 1500 V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM16GZ51 SM16JZ51 SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 RATING 400 600 16 150 (50 Hz) 165 (60 Hz) 112.5 50 5 0.5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 R. M. S. On−tate Current (Full Sine Waveform Ta = 82°C) Peak One Cylce Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) 2 JEDEC JEITA TOSHIBA Weight: 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM...