Index-Guided High Power AlGaAs Laser Diode
SLD231VL
Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales offic...
Description
SLD231VL
Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales office.
Description The SLD231VL is a high-power, index-guided AlGaAs laser diode. Features Low current consumption Small astigmatism Small package (φ5.6mm) Applications Pickup for optical discs Structure AlGaAs quantum well structured laser diode PIN photodiode for optical power output monitor Recommended Operating Optical Power Output Absolute Maximum Ratings (Tc = 25°C) Optical power output PO Reverse voltage VR Operating temperature Storage temperature Topr Tstg 35mW M-274
LD PD
40 2 15 –10 to +60 –40 to +85
mW V V °C °C
Connection Diagram
3 COMMON
Pin Configuration
PD 2 1
LD
2
1
3 1. LD anode 2. PD anode 3. COMMON Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94Y22B97-PS
SLD231VL
Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop λ θ⊥ θ// ∆X, ∆Y, ∆Z ∆φ⊥ ∆φ// ηD As Im PO = 35mW PO = 35mW PO = 35mW, Vr = 5V PO = 35mW PO = ...
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