Document
SMP100MC
Trisil™ for telecom equipment protection
Features
■ Bidirectional crowbar protection ■ Voltage: range from 140 V to 400 V ■ Low VBO / VR ratio ■ Micro capacitance from 15 pF to 30 pF @ 50 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min. ■ Repetitive peak pulse current:
IPP = 100 A (10/1000 µs)
Benefits
■ Trisils are not subject to ageing and provide a fail safe mode in short circuit for better protection.
■ Helps equipment meet main standards such as UL60950, IEC 950 / CSA C22.2 and UL1459.
■ Epoxy meets UL94, V0. ■ Package is JEDEC registered (DO-214AA).
Complies with the following standards
■ GR-1089 Core ■ ITU-T-K20/K21 ■ IEC 61000-4-5 ■ TIA/EIA IS-968 ■ UL497B recognized, UL file E136224
Applications
Any sensitive equipment requiring protection against lightning strikes and power crossing: ■ Terminals (phone, fax, modem...) and central
office equipment ■ ADSL2+ and low end VDSL
SMB (JEDEC DO-214AA)
Description
The SMP100MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission line cards (ADSL, VDSL, ISDN...). SMP100MC series has been tested and confirmed compatible with Cooper Bussmann Telecom Circuit Protector TCP 1.25 A.
TM: Trisil is a trademark of STMicroelectronics.
February 2012
Doc ID 9699 Rev 5
1/13
www.st.com
13
Characteristics
1 Characteristics
SMP100MC
Table 1. In compliance with the following standards
Standard
Peak surge voltage (V)
Waveform voltage
Required peak current
(A)
Current waveform
Minimum serial
resistor to meet
standard (Ω)
GR-1089 Core
2500
2/10 µs
500
2/10 µs
First level
1000
10/1000 µs
100
10/1000 µs
0 0
GR-1089 Core Second level
5000
2/10 µs
500
2/10 µs
0
GR-1089 Core Intra-building
1500
2/10 µs
100
2/10 µs
0
ITU-T-K20/K21
ITU-T-K20 (IEC61000-4-2)
IEC61000-4-5
6000 1500
8000 15000
4000 4000
10/700 µs
1/60 ns 10/700 µs 1.2/50 µs
150 37.5
5/310 µs
ESD contact discharge ESD air discharge
100 5/310 µs 100 8/20 µs
0 0
0 0
0 0
TIA/EIA IS-968, lightning surge
type A
1500 800
10/160 µs 10/560 µs
200 100
10/160 µs 10/560 µs
0 0
TIA/EIA IS-968,
lightning surge
1000
9/720 µs
25
5/320 µs
type B
0
2/13 Doc ID 9699 Rev 5
SMP100MC
Characteristics
Table 2. Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
Value Units
IPP Repetitive peak pulse current
IFS Fail-safe mode: maximum current(1)
ITSM
Non repetitive surge peak on-state current (sinusoidal)
10/1000 µs 8/20 µs
10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs
8/20 µs
t = 0.2 s t=1s t=2s t = 15 mn
I2t I2t value for fusing
t = 16.6 ms t = 20 ms
Tstg Storage temperature range Tj Operating junction temperature range TL Maximum lead temperature for soldering during 10 s.
1. In fail safe mode the device acts as a short circuit.
100 300 140 150 200 300 500
5
18 9 7 4
20 21
-55 to 150
-40 to 150
260
A
kA A
A²s °C °C °C
Table 3. Thermal resistances
Symbol
Parameter
Value Unit
Rth(j-a) Rth(j-l)
Junction to ambient (with recommended footprint) Junction to leads
100 °C/W 20 °C/W
Figure 1.
Electrical characteristics - definitions (Tamb = 25 °C)
Symbol Parameter
VRM Stand-off voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance
IPP I
IBO IH
IRM V VRM VR VBO
Doc ID 9699 Rev 5
3/13
Characteristics
SMP100MC
Table 4. Electrical characteristics - values (Tamb = 25 °C)
Types
IRM @ VRM
IR @ VR
max.
max.
Dynamic Static VBO (1) VBO @ IBO(2)
IH(3)
C(4)
C(5)
max. max. max. min. typ. typ.
µA V µA V V V mA mA pF pF
SMP100MC-140 126 140 180 175
30 60
SMP100MC-160
144
160 205 200
25 50
SMP100MC-200
180
200 255 250
20 45
SMP100MC-230
207
230 295 285
20 40
25
800 150
SMP100MC-270
243
270 345 335
20 40
SMP100MC-320
290
320 400 390
15 35
SMP100MC-360
325
360 460 450
15 35
SMP100MC-400
360
400 540 530
15 30
1. See Figure 16: Test circuit 1 for Dynamic IBO and VBO parameters 2. See Figure 17: Test circuit 2 for IBO and VBO parameters 3. See Figure 18: Test circuit 3 for dynamic IH parameter 4. VR = 50 V bias, VRMS=1V, F=1 MHz 5. VR = 2 V bias, VRMS=1V, F=1 MHz
4/13 Doc ID 9699 Rev 5
SMP100MC
Characteristics
Figure 2. Pulse waveform
%IPP 100
Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs)
50
0 tr tp
t
Figure 3. Non repetitive surge peak on-state current versus overload duration
ITSM(A)
70
60
F=50Hz Tj initial = 25°C
50
40
30
20
10
0 1.E-02
1.E-01
t(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 4. On-state voltage versus on-state current (typical values)
IT(A)
100 Tj=25°C
VT(V)
10 012345678
Figure 5.
Relative variation of holding current versus junction temperature
IH[Tj] / IH[Tj=25°C]
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
0.2 Tj(°C)
0.0 -40 -30 -20 -.