SML80B16

SML80B16 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 800V 16A ID(cont) RDS(on) 0.560W Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 800 16 64 ±30 ±40 370 2.96 –55 to 150 300 16 30 1300 V A A V W W/°C °C A...