SML50H24
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035)
17.96 (0.707) 17.70 (0.697)
13.84 (0.545) 13.58 (0.535)
1 2 3
4.19 (0.165) 3.94 (0.155) Dia.
21.21 (0.835) 20.70 (0.815)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 500V 24A ID(cont) RDS(on) 0.190Ω
3.56 (0.140) BSC
19.05 (0.750) 12.70 (0.500)
5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• Faster Switching • Lower Leakage • TO–258 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
500 24 96 ±30 ±40 250 2.0 –55 to 150 300 24 30 1300
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 4.51mH, RG = 25Ω, Peak IL = 24A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
6/99
SML50H24
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250µA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 24 0.190 Min. 500 Typ. Max. Unit V 25 250 ±100 4 µA nA V A Ω
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6Ω Min. Typ. 4400 600 230 200 30 80 12 14 55 11 Max. Unit 5280 840 350 300 45 120 25 30 80 20 ns nC pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Te.