SML1001R3AN

LAB TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 901R1AN 900 9.5 38 ±30 230 SML 1001R1AN 901R3AN 1000 900 8.5 34 1001R3AN 1000 Unit V A A V W –55 to 150 °C STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) Characteristic / Test Conditions / Part Number Drain – Source Breakdown Voltage SML1001R1AN / SML1001R3AN (VGS = 0V , ID = 250mA) Zero Gate Voltage Drain Current Gate – Source Leakage Current On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max , VGS = 10V) Static Drain – Source On State Resistance 2 (VGS =10V , ID = 0.5 ID [Cont.]) SML901R1AN / SML901R3AN (VGS = 0V , VDS = VDSS) (VGS = 0V , VDS = 0.8VDSS , TC = 125°C) (VGS = ±30V , VDS = 0V) SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN 9.5 8.5 2 SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN 4 1.1 1.3 Min. 1000 900 250 1000 ±100 Typ. Max. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Widt...