SMJ44400

DRAM Austin Semiconductor, Inc. 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-90847 MIL-STD-883 SMJ44400 PIN ASSIGNMENT (Top View) 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 Vss DQ4 DQ3 CAS\ OE\ A8 A7 A6 A5 A4 FEATURES Organized 1,048,576 x 4 Single +5V ±10% power supply Enhanced Page-Mode operation for faster memory access P Higher data bandwidth than conventional page-mode parts P Random Single-Bit Access within a row with a column address CAS\-Before-RAS\ (CBR) Refresh Long Refresh period: 1024-cycle Refresh in 16ms (Max) 3-State unlatched Output Low Power Dissipation All Inputs/Outputs and Clocks are TTL Compatible Processing to MIL-STD-883, Class B available Pin Name A0 - A9 CAS\ DQ1 - DQ4 OE\ RAS\ W\ Vcc Vss Function Address Inputs Column-Address Strobe Data Inputs/Outputs Output Enable Row-Address Strobe Write Enable 5V Supply Ground OPTIONS Timing 80ns access 100ns access 120ns access Package(s) Ceramic DIP (400mils) Ceramic Flatpack MARKING -80 -10 -12 The SMJ44400 is offered in a 400-mil, 20-pin ceramic side-brazed dual-in-line package (JD suffix) and a 20-pin ceramic flatpack (HR suffix) that are characterized for operation from -55°C to +125°C. OPERATION JD HR No. 113 No. 308 Enhanced Page Mode Enhanced page-mode operation allows faster memory access by keeping the same row address while selecting rand...