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TGF4250-EEU
4.8 mm Discr ete HFET
q q q q q ...
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TGF4250-EEU
4.8 mm Discr ete HFET
q q q q q q
PHOTO ENLARGEMENT
4800 µm x 0.5 µm HFET Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications
4250
0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect
Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE. Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach methods as well as thermocompr ession and thermosonic wire-bonding processes. The TGF4250-EEU is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGF4250-EEU
p EXAMPLE OF DC I-V CURVES
1.1 1 0.9 VG = 0.0 to -2.25 V (0.25 V steps) T A=65°C
Drain Current (A)
0.8 0.7 0.6 0.5
0.4 0.3
0.2 0.1
0 0 1 2 3 4 5 6 7 8 9 10
Drain Voltage (V)
OUTPUT POWER VS. INPUT POWER Output Power (dBm)
36 34 32 30 28 26 24
F =8.5 GHz VD =8.0 V I Q =200 mA* T A =25°C
22 20 10 12 14 16 18 20 22 24 26 28
Input Power (dBm) * I Q is defined as the drain current before application of RF signal at the input.
POWER ADDED EFFICIENCY VS. INPUT POWER
55 5...
