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TGF4230-EEU
1.2mm Discrete HFET
q q q q q q
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TGF4230-EEU
1.2mm Discrete HFET
q q q q q q
PHOTO ENLARGEMENT
1200 µm X 0.5 µm HFET Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz
4230
Suitable for High-Reliability Applications 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect
Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGF4230-EEU
EXAMPLE OF DC I-V CURVES
0.3 VG = 0.0 to -2.25 V (0.25 V steps) C TA = 25°
0.25
Drain Current (A)
0.2
0.15
0.1
0.05
0 0 1 2 3 4 5 6 7 8 9 10
Drain Voltage (V)
OUTPUT POWER VS. INPUT POWER Output Power (dBm)
30 28
26 24
F = 8.5GHz V D =8.0V I Q =50mA* C T A =25°
22 20 18 16 4 6 8 10 12 14 16 18 20 22
Input Power (dBm) Note: I Q is defined as the drain current before application of RF signal at the input.
POWER ADDED EFFICIENCY VS. INPUT POWER
60
55 50
45 40
F = 8.5GHz V D =8.0V I Q =50mA* C T A =25°
PAE (%)
35 30 25 20 15
10 5 4 6 8 10...
