TGA1319A

Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319A Key Features and Performance 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain 12 dBm Pout 3V, 45 mA Chip Dimensions 1.985 mm x .980 mm Primary Applications Point-to-Point Radio Point-to-Multipoint Communications 0 Preliminary Data, 2 Fixtured samples @ 25C 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 15 16 17 18 19 20 21 22 23 24 25 26 27 -4 -8 -12 -16 -20 15 16 17 18 19 20 21 22 23 24 25 26 Typical NF @ 25C 30 28 26 24 22 20 18 16 14 12 10 15 16 17 18 19 20 21 22 23 24 25 26 Typical S11 @ 25C 0 -5 -10 -15 -20 15 16 17 18 19 20 21 22 23 24 25 26 Typical Gain @ 25C Typical S22 @ 25C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information August 29, 2000 TGA1319A Vd=3V 100 pF 100 pF RFin RFout 100 pF 100 pF Vg1 Vg2 TGA1319A - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product...