TFD312S

TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series s Features qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max qIsolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) 13.0 min External Dimensions (Unit: mm) 8.4±0.2 0.2 4.0± 10.0±0.2 φ 3.3±0.2 4.2±0.2 C 0.5 2.8 0.3 16.9± A a b 1.35±0.15 1.35± +0.2 0.85 – 0.1 0.15 0.8±0.2 3.9± 0.2 G K 2.54 2.2±0.2 2.54 +0.2 0.45 – 0.1 2.4±0.2 a. Part Number b. Lot Number (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT (AV) IT (RMS) ITSM I2t VFGM VRGM PGM PG (AV) Tj Tstg VISO Ratings V 3.0 4.7 60 18 1.5 5.0 5.0 0.5 Unit V A A A A2 sec V V W W °C °C V Conditions Tj=–10 to +125°C, RGK=1kΩ 50Hz Half-cycle sinewave, 180°, Continuous current, Tc = 92°C 50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 2ms f f f t 10ms 10% 10% 50Hz, duty 50Hz 50Hz, duty –10 to +125 –40 to +125 1500 50Hz Sine wave, RMS, Terminal to case, 1min. VVDRM Rank Ratings -C 20 -F 35 -G 45 -J 80 -K 100 -L 120 -M 145 -N 170 -O 190 sElectrical Characteristics Parameter Off-state current Breakover volta...