Document
TF944..H
TF944..H
Fast Switching Thyristor
Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters
KEY PARAMETERS VDRM 3500V IT(RMS) 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs
FEATURES
s Double Side Cooling s High Surge Capability s High Voltage
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 3500 3400 3200 3000 Conditions
TF944 35H TF944 34H TF944 32H TF944 30H
VRSM = VRRM + 100V IDRM = IRRM = 100mA at VRRM or VDRM & Tvj
Lower voaltage grades available.
Outline type code: MU169 See Package Details for further information.
CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 850 1350 Units A A
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SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 13.0 845 x 103 Units kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6
o
Min. dc Anode dc -
Max. 0.02 0.006 0.012 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR
0.5x IRR
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DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1500A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IH tq QRR Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Holding current Turn-off time Reverse recovery charge At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 500A, VR = 100V, dV/dt = 20V/µs to 66% VDRM, dIR/dt = 50A/µs. tq code: H Non-repetitive 100* 300* 800 1.35 0.5 -* -* 120 Repetitive 50Hz Min. Max. 2.4 100 500 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs µC
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 250 0.25 30 0.25 5.0 10 50 3.0 Units V mA V V V V A W W
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CURVES
5000 Measured under pulse conditions
Instantaneous on-state current, IT - (A)
4000
3000 Tj = 125˚C 2000
1000
0
0
1.0 2.0 3.0 Instantaneous on-state voltage, VT - (V)
Fig.1 Maximum (limit) on-state characteristics
4.0
1000
Reverse current, IR - (A)
Conditions: Tj = 125˚C tp = 700µs VR = 100V
IT = 3000A
IT = 800A IT = 400A
100
IT = 100A
10
1
10 100 Rate of rise of on-state current, dI/dt - (A/µs)
Fig.2 Reverse current vs rate of rise of on-state current
1000
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TF944..H
100000
Measurement conditions of QRA1 ITM QRA1
Conditions: Tj = 125˚C tp = 700µs VR = 100V
Recovered charge, QRA1 - (µC)
tp = 1ms dIR/dt IRR
10000
0.5IRR
IT = 3000A IT = 800A 1000 IT = 400A
IT = 100A
100
1
10 100 Rate of rise of on-state current, dI/dt - (A/µs)
1000
Fig.3 Recovered charge vs rate of rise of on-state current
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TF944..H
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 approx (one in each electrode)
Cathode tab
Ø74 max Ø46 min Ø1.5 Gate Ø46 min Ø68 max
Cathode
26 ± 1
Anode
Nominal weight: 500g Clamping force: 23.5kN ±10% Lead length: 250mm Package outine type code: MU169
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic
TO T
Applicati.