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TF94432H Dataheets PDF



Part Number TF94432H
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Fast Switching Thyristor
Datasheet TF94432H DatasheetTF94432H Datasheet (PDF)

TF944..H TF944..H Fast Switching Thyristor Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 3500V IT(RMS) 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 3500 3400 3200 3000 Conditions TF94.

  TF94432H   TF94432H


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TF944..H TF944..H Fast Switching Thyristor Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 3500V IT(RMS) 1350A ITSM 13000A dV/dt 500V/µs dI/dt 500A/µs tq 120µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 3500 3400 3200 3000 Conditions TF944 35H TF944 34H TF944 32H TF944 30H VRSM = VRRM + 100V IDRM = IRRM = 100mA at VRRM or VDRM & Tvj Lower voaltage grades available. Outline type code: MU169 See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 850 1350 Units A A 1/7 TF944..H SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 13.0 845 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6 o Min. dc Anode dc - Max. 0.02 0.006 0.012 135 Units o C/W o C/W C/W C/W C/W o o Double side Single side o Rth(c-h) Thermal resistance - case to heatsink o C C C o kN MEASUREMENT OF RECOVERED CHARGE - QRA1 Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR 0.5x IRR 2/7 TF944..H DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 1500A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IH tq QRR Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Holding current Turn-off time Reverse recovery charge At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 500A, VR = 100V, dV/dt = 20V/µs to 66% VDRM, dIR/dt = 50A/µs. tq code: H Non-repetitive 100* 300* 800 1.35 0.5 -* -* 120 Repetitive 50Hz Min. Max. 2.4 100 500 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs µC *Typical value. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Anode positive with respect to cathode Anode negative with respect to cathode Typ. Max. 3.0 250 0.25 30 0.25 5.0 10 50 3.0 Units V mA V V V V A W W 3/7 TF944..H CURVES 5000 Measured under pulse conditions Instantaneous on-state current, IT - (A) 4000 3000 Tj = 125˚C 2000 1000 0 0 1.0 2.0 3.0 Instantaneous on-state voltage, VT - (V) Fig.1 Maximum (limit) on-state characteristics 4.0 1000 Reverse current, IR - (A) Conditions: Tj = 125˚C tp = 700µs VR = 100V IT = 3000A IT = 800A IT = 400A 100 IT = 100A 10 1 10 100 Rate of rise of on-state current, dI/dt - (A/µs) Fig.2 Reverse current vs rate of rise of on-state current 1000 4/7 TF944..H 100000 Measurement conditions of QRA1 ITM QRA1 Conditions: Tj = 125˚C tp = 700µs VR = 100V Recovered charge, QRA1 - (µC) tp = 1ms dIR/dt IRR 10000 0.5IRR IT = 3000A IT = 800A 1000 IT = 400A IT = 100A 100 1 10 100 Rate of rise of on-state current, dI/dt - (A/µs) 1000 Fig.3 Recovered charge vs rate of rise of on-state current 5/7 TF944..H PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 approx (one in each electrode) Cathode tab Ø74 max Ø46 min Ø1.5 Gate Ø46 min Ø68 max Cathode 26 ± 1 Anode Nominal weight: 500g Clamping force: 23.5kN ±10% Lead length: 250mm Package outine type code: MU169 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic TO T Applicati.


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