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TF921

Dynex Semiconductor

Fast Switching Thyristor

TF921..H TF921..H Fast Switching Thyristor Advance Information Replaces June 1998 version, DS4280-3.0 DS4280-4.0 Januar...


Dynex Semiconductor

TF921

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Description
TF921..H TF921..H Fast Switching Thyristor Advance Information Replaces June 1998 version, DS4280-3.0 DS4280-4.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 2500V IT(RMS) 1570A ITSM 13600A dV/dt 500V/µs dI/dt 500A/µs tq 120µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 2500 2400 2200 Conditions TF921 25H TF921 24H TF921 22H VRSM = VRRM + 100V IDRM = IRRM = 100mA at VRRM or VDRM & Tvj Lower voltage grades available. Outline type code: MU169. See Package Details for further information. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 1000 1570 Units A A 1/5 TF921..H SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 13.6 930 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6 o Min. dc Anode dc - Max. 0.02...




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