Document
TF915..B
TF915..B
Fast Switching Thyristor
Replaces December 1998 version, DS4279-3.0 DS4279-4.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters
KEY PARAMETERS VDRM 1400V IT(RMS) 1700A ITSM 20000A dV/dt 300V/µs dI/dt 500A/µs tq 40µs
FEATURES
s Double Side Cooling s High Surge Capability s High Voltage
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions
TF915 14B TF915 12B TF915 10B TF915 08B TF915 06B
VRSM = VRRM + 100V IDRM = IRRM = 60mA at VRRM or VDRM & Tvj Outline type code: MU169. See Package Details for further information.
Lower voltage grades available.
CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 1080 1700 Units A A
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SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 20.0 2000 x 103 Units kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 22.3 125 150 24.6
o
Min. dc Anode dc -
Max. 0.020 0.006 0.012 125
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR
0.5x IRR
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DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 2000A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20Ω dI/dt Rate of rise of on-state current tr ≤ 0.5µs, Tj = 125˚C VT(TO) rT tgd t(ON)TOT IH IL Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Latching current At Tvj = 125oC At Tvj = 125oC Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 50A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 25oC, IG = 0.5A, VD = 12V Tj = 125˚C, IT = 250A, VR = 50V, tq code: B dV/dt = 20V/µs (Linear to 60% VDRM), dIR/dt = 50A/µs, Gate open circuit Non-repetitive 1.5* 3.0* 100* 300* 800 1.25 0.25 40 Repetitive 50Hz Min. Max. 1.75 60 300 500 Units V mA V/µs A/µs A/µs V mΩ µs µs mA mA µs
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6Ω VDRM = 12V, Tcase = 25oC, RL = 6Ω At VDRM Tcase = 125oC, RL = 1kΩ Typ. Max. 3.0 200 0.2 5.0 10 50 3 Units V mA V V A W W
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CURVES
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NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω
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NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. dI/dt = 25A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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NOTES: 1. dI/dt = 50A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
NOTES: 1. dI/dt = 100A/µs 2. VD ≤ 600V. 3. VR ≤ 10V. 4. R.C Snubber, C = 0.22µF, R = 4.7Ω
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.1 approx (one in each electrode)
Cathode tab
Ø74 max Ø46 min Ø1.5 Gate Ø46 min Ø68 max
Cathode
26 ± 1
Anode Nominal weight: 500g Clamping force: 23.5kN ±10% Lead length: 250mm Package outine type code: MU169 Application Note Number AN4506 AN4840 AN4839 AN4870 AN4853 AN4999 AN5001
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