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TF66610A

Dynex Semiconductor

Fast Switching Thyristor

TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATION...


Dynex Semiconductor

TF66610A

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Description
TF666..A TF666..A Fast Switching Thyristor Replaces March 1998 version, DS4274-2.2 DS4274-3.0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters KEY PARAMETERS VDRM 1400V IT(RMS) 700A ITSM 9000A dV/dt 300V/µs dI/dt 500A/µs tq 20µs FEATURES s Double Side Cooling s High Surge Capability s High Voltage VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM 1400 1200 1000 800 600 Conditions TF666 14A TF666 12A TF666 10A TF666 08A TF666 06A VRSM = VRRM + 100V IDRM = IRRM = 35mA at VRRM or VDRM & Tvj Outline type code: MU171. See Package Details for further information. Lower voltage grades available. CURRENT RATINGS Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 446 700 Units A A 1/13 TF666..A SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125˚C 10ms half sine; VR = 0% VRRM, Tj = 125˚C Max. 9.0 405.0 x 103 Units kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 9.5 125 150 10.5 o Min. dc Anode dc - Max. 0...




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